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| Use of negative capacitance to provide voltage amplification for low power nanoscale devices S Salahuddin, S Datta Nano letters 8 (2), 405-410, 2008 | 2279 | 2008 |
| How Good Can Monolayer MoS2 Transistors Be? Y Yoon, K Ganapathi, S Salahuddin Nano letters 11 (9), 3768-3773, 2011 | 1818 | 2011 |
| Proposal for an all-spin logic device with built-in memory B Behin-Aein, D Datta, S Salahuddin, S Datta Nature nanotechnology 5 (4), 266-270, 2010 | 956 | 2010 |
| Memory leads the way to better computing HSP Wong, S Salahuddin Nature nanotechnology 10 (3), 191-194, 2015 | 927 | 2015 |
| Negative capacitance in a ferroelectric capacitor AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ... Nature materials 14 (2), 182-186, 2015 | 812 | 2015 |
| Deterministic switching of ferromagnetism at room temperature using an electric field JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ... Nature 516 (7531), 370-373, 2014 | 769 | 2014 |
| Room-temperature antiferromagnetic memory resistor X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ... Nature materials 13 (4), 367-374, 2014 | 716 | 2014 |
| Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 651 | 2020 |
| The era of hyper-scaling in electronics S Salahuddin, K Ni, S Datta Nature electronics 1 (8), 442-450, 2018 | 573 | 2018 |
| Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ... Physical review letters 107 (21), 217202, 2011 | 524 | 2011 |
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| Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ... Applied Physics Letters 99 (11), 2011 | 400 | 2011 |
| Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation AI Khan, CW Yeung, C Hu, S Salahuddin 2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011 | 377 | 2011 |
| Sub-60mV-swing negative-capacitance FinFET without hysteresis KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ... 2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015 | 359 | 2015 |
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| Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ... Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015 | 327 | 2015 |
| Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ... Nano letters 17 (8), 4801-4806, 2017 | 287 | 2017 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 284 | 2016 |
| Spin Hall effect clocking of nanomagnetic logic without a magnetic field D Bhowmik, L You, S Salahuddin Nature nanotechnology 9 (1), 59-63, 2014 | 282 | 2014 |
