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Justin Weber
Justin Weber
Computational Materials Science, Intel Corporation
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Oxygen vacancies and donor impurities in β-Ga2O3
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied physics letters 97 (14), 2010
10032010
Quantum computing with defects
JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ...
Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010
9312010
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
3962011
The electronic structure of β-Ga2O3
M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ...
Applied Physics Letters 97 (21), 2010
2092010
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 2010
1982010
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti, CG Van de Walle
Journal of Applied Physics 109 (3), 2011
1942011
Dangling-bond defects and hydrogen passivation in germanium
JR Weber, A Janotti, P Rinke, CG Van de Walle
Applied Physics Letters 91 (14), 2007
1802007
Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
MS Miao, JR Weber, CG Van de Walle
Journal of Applied Physics 107 (12), 2010
1192010
Defects in SiC for quantum computing
JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ...
Journal of Applied Physics 109 (10), 2011
972011
Quantum computing with defects
L Gordon, JR Weber, JB Varley, A Janotti, DD Awschalom, ...
MRS Bulletin 38 (10), 802 - 807, 2013
782013
Dangling bonds and vacancies in germanium
JR Weber, A Janotti, CG Van de Walle
Physical Review B—Condensed Matter and Materials Physics 87 (3), 035203, 2013
702013
Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces
JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 97 (19), 2010
662010
Point defects in Al2O3 and their impact on gate stacks
JR Weber, A Janotti, CG Van de Walle
Microelectronic engineering 86 (7-9), 1756-1759, 2009
452009
Defects at Ge/oxide and III–V/oxide interfaces
CG Van de Walle, M Choi, JR Weber, JL Lyons, A Janotti
Microelectronic engineering 109, 211-215, 2013
362013
Role of hydrogen at germanium/dielectric interfaces
CG Van de Walle, JR Weber, A Janotti
Thin Solid Films 517 (1), 144-147, 2008
172008
Erratum:“Oxygen vacancies and donor impurities in β-Ga2O3”[Appl. Phys. Lett. 97, 142106 (2010)]
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 108 (3), 2016
132016
Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces
MS Miao, PG Moses, JR Weber, A Janotti, CG Van de Walle
Europhysics Letters 89 (5), 56004, 2010
122010
Defects in germanium
JR Weber, A Janotti, CG Van de Walle
Photonics and Electronics with Germanium, 1-23, 2015
112015
State-of-the-art TCAD: 25 years ago and today
M Stettler, S Cea, S Hasan, L Jiang, A Kaushik, P Keys, R Kotlyar, ...
2019 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2019
72019
Dangling bonds, the charge neutrality level, and band alignment in semiconductors
JB Varley, JR Weber, A Janotti, CG Van de Walle
Journal of Applied Physics 135 (7), 2024
22024
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