| A single-pixel wireless contact lens display AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ... Journal of Micromechanics and Microengineering 21 (12), 125014, 2011 | 223 | 2011 |
| P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters 40 (7), 1036-1039, 2019 | 126 | 2019 |
| Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ... Separation and Purification Technology 120, 206-214, 2013 | 97 | 2013 |
| Identification of the -O defect complex in AlN single crystals JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ... Physical Review B—Condensed Matter and Materials Physics 84 (8), 081204, 2011 | 97 | 2011 |
| Low energy electron beam induced vacancy activation in GaN H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto Applied Physics Letters 100 (12), 2012 | 71 | 2012 |
| AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ... Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018 | 62 | 2018 |
| Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals S Pimputkar, S Suihkonen, M Imade, Y Mori, JS Speck, S Nakamura Journal of crystal growth 432, 49-53, 2015 | 62 | 2015 |
| Defects in single crystalline ammonothermal gallium nitride S Suihkonen, S Pimputkar, S Sintonen, F Tuomisto Advanced Electronic Materials 3 (6), 1600496, 2017 | 58 | 2017 |
| Atomic layer etching of gallium nitride (0001) C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ... Journal of Vacuum Science & Technology A 35 (6), 2017 | 56 | 2017 |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ... Journal of crystal growth 300 (2), 324-329, 2007 | 48 | 2007 |
| Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios IEEE Electron Device Letters 40 (8), 1245-1248, 2019 | 47 | 2019 |
| Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN S Sintonen, M Rudziński, S Suihkonen, H Jussila, M Knetzger, E Meissner, ... Journal of Applied Physics 116 (8), 2014 | 47 | 2014 |
| Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes P Kivisaari, L Riuttanen, J Oksanen, S Suihkonen, M Ali, H Lipsanen, ... Applied Physics Letters 101 (2), 2012 | 45 | 2012 |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ... Journal of Crystal Growth 310 (23), 5162-5165, 2008 | 45 | 2008 |
| Growth of InN by vertical flow MOVPE S Suihkonen, J Sormunen, VT Rangel-Kuoppa, H Koskenvaara, ... Journal of crystal growth 291 (1), 8-11, 2006 | 44 | 2006 |
| MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ... Journal of Crystal Growth 487, 50-56, 2018 | 42 | 2018 |
| Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Journal of applied physics 106 (12), 2009 | 39 | 2009 |
| Infrared absorption of hydrogen-related defects in ammonothermal GaN S Suihkonen, S Pimputkar, JS Speck, S Nakamura Applied Physics Letters 108 (20), 2016 | 38 | 2016 |
| Effect of growth conditions on electrical properties of Mg-doped p-GaN O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ... Journal of crystal growth 298, 811-814, 2007 | 38 | 2007 |
| Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ... Journal of Applied Physics 119 (9), 2016 | 36 | 2016 |
